The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi<sub>2</sub>O<sub>3</sub> Thin Films Prepared Using Reactive Plasma Sputtering Technology

<div>SEM Bi<sub>2</sub>O<sub>3</sub> films and nanostructures being deposited at various substrate temperatures: (a) 200°C, (b) 300°C, (c) 400°C, and (d) 500°C.</div>

Journal of Nanotechnology

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Figure 2: The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi<sub>2</sub>O<sub>3</sub> Thin Films Prepared Using Reactive Plasma Sputtering Technology 

Figure 2 | The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi2O3 Thin Films Prepared Using Reactive Plasma Sputtering Technology 