|
| Parameter | Sample type |
| I-type | II-type | III-type |
|
| Technological regime | = 220 °C
= 60 min | = 260 °C
= 75 min | = 260 °C
= 80 min |
| Equilibrium density of carriers (CdS base) | << 1013 cm−3 | ≥ 1.5 × 1013 cm−3 | ≥ 1.5 × 1013 cm−3 |
Cu2S-CdS heterostructure
(pulsed capacitance-BELIV) | Capacitor-like [18], insulator-specific state of CdS base material | Junction-like [18], generation current component in CdS base is pronounced | Junction-like [18], barrier charging current prevails |
| Activation energy of the dominant traps (DLTS, PIS) | n/a
[19]
1.17 ± 0.02 eV;
1.65 ± 0.02 eV;
2.19 ± 0.04 eV | [19]
0.22 ± 0.02 eV;
0.40 ± 0.02 eV;
[19]
1.21 ± 0.02 eV;
1.56 ± 0.02 eV;
2.19 ± 0.04 eV | [19]
0.22 ± 0.02 eV;
0.31 ± 0.02 eV;
[19]
1.19 ± 0.02 eV;
1.62 ± 0.02 eV;
2.19 ± 0.04 eV |
| Grain size/homogeneity of distribution crystal grains in CdS substrate (MCI) | <1 μm
inhomogeneous | 2–10 μm
homogeneous | 2–10 μm
inhomogeneous |
|
Instantaneous lifetime of the initial decay (MW-PC) | 3 ns | 5 ns | 10 ns |
| Instantaneous lifetime of the asymptotic decay (MW-PC) | >100 μs | >800 μs | >400 μs |
| Ratio of the amplitudes of the asymptotic to the initial MW-PC decay = / | 0.25 | 0.01 | 0.04 |
Instantaneous lifetime of the initial PL decay
G-PL peaked at 500 nm (TR-PL) | 5 ns
PL photo-quenching observable | 2 ns
the strongest PL photo-quenching | 2 ns
strong PL photo-quenching |
| Instantaneous lifetime of the asymptotic decay for R-PL peaked at 700 nm (TR-PL) | n/a | 40 ns | 150 ns |
Ratio of the G-PL & R-PL intensities
/ (MCI-PLS) | <1 | ≥1 | ≥1.5 |
| Fractional SER index α (MW-PC) | 0.20 | 0.16 | 0.17 |
| Fractal factor (SER) | 0.17 | 0.13 | 0.14 |
|
