Modeling Surface Recombination at the p-Type Si/SiO₂ Interface via Dangling Bond Amphoteric Centers

Figure 5

Effective surface recombination velocity versus surface potential for an injection level Δ𝑛(𝑊)=10¹⁰/cm³, 𝐸_corr=0.4 eV, assuming 𝜎_𝑛=𝜎⁰_𝑛 and 𝜎_𝑝=𝜎⁰_𝑝 and different combinations of 𝑅_𝑛 and 𝑅_𝑝.