Modeling Surface Recombination at the p-Type Si/SiO₂ Interface via Dangling Bond Amphoteric Centers

Figure 6

Fitting of experimentally measured surface recombination velocity 𝑆_gen=𝑆_eff×(Δ𝑛/𝑝)^0.5 versus surface electron/hole concentration ratio 𝑛_𝑠/𝑝_𝑠. Circles: experimental results [22], line: results of proposed model.