Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Figure 3

Central electric potential at different positions along the channel obtained from TCAD simulation for = 4 nm and = 10 nm; source and drain length are both 10 nm; = 0.1 V, = 0.05 V. The horizontal axis is distance from source electrode. Interfaces between channel and source and channel and drain are depicted by dashed lines.