Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Table 1

Device parameters used in the simulations.

Parameter	Value
Thickness of the SOI layer, (μm)	2
Thickness of the buried oxide layer, (μm)	1
Thickness of P-substrate, (μm)	2
Thickness of the LVID profile, (μm)	0.1–2
Length of n-type drift region, (μm)	10
Length of the p-well, (μm)	5
Concentration of P-substrate, (cm^−3)	8 × 10^14
Concentration of p-well, (cm^−3)	3 × 10^16
Concentration of uniform doping in drift region, (cm^−3)	Optimized
The slope of the LVID profile, (cm^−4)	Optimized