Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories

<div>Distributions of densities of interface states (<svg height="11.9316pt" id="M139" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 15.78 11.9316" width="15.78pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M743 375C743 570 607 650 407 650H136L130 622C214 612 220 606 204 526L125 122C110 43 105 36 24 27L17 0H250C382 0 482 23 571 76C680 141 743 248 743 375ZM644 379C644 188 520 36 305 36C277 36 249 38 229 46C205 55 202 71 212 126L293 553C300 588 306 600 317 606C330 613 356 617 390 617C547 617 644 537 644 379Z" id="g113-69"></path></g><g transform="matrix(.0091,0,0,-0.0091,9.893,3.132)"><path d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z" id="g58-103"></path></g><g transform="matrix(.0091,0,0,-0.0091,12.286,3.132)"><path d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z" id="g58-114"></path></g></svg>) determined by modified Terman method versus energy (<svg height="8.68572pt" id="M140" style="vertical-align:-0.0498209pt" version="1.1" viewbox="-0.0498162 -8.6359 8.13765 8.68572" width="8.13765pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M593 650H142L136 622C219 616 224 611 209 531L130 120C114 39 108 34 23 28L17 0H501C518 32 557 130 568 158L540 169C519 132 495 93 469 70C439 43 409 35 332 35C272 35 241 37 225 50C211 61 211 89 222 149L253 320H350C441 320 443 312 441 239H471L510 434H481C455 366 448 358 360 358H260L303 572C311 613 312 615 348 615H431C509 615 522 603 532 581C544 555 546 531 545 491L574 493C583 555 592 631 593 650Z" id="g113-70"></path></g></svg>) in silicon bandgap obtained on samples stressed under write (empty circles) and erase conditions (filled circles).</div>

Advances in Condensed Matter Physics

fig12

Figure 12

Figure 12: Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories 

Figure 12 | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories 