Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

<div>(a) Schematic diagram of the laser reflection, absorption, and transmission (here the SiO2 capping layer is used here to protect the Ge film from damage). (b) Absorption rates at <i>λ</i>=808 nm of Si<sub>0.2</sub>Ge<sub>0.8</sub> and Si layer as a function of Si<sub>0.2</sub>Ge<sub>0.8</sub> thicknesses.</div>

Advances in Condensed Matter Physics

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Figure 5

Figure 5: Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate 