Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Figure 4

s-Ge/Si Monte Carlo and electron scattering mechanism simulation carrier transport results. (a) The average electron energy of s-Ge/Si under different strains varies with the applied electric field. (b) The average electron drift speed of s-Ge/Si under different strains varies with the applied electric field. (c) The relationship between the scattering rate of s-Ge/Si electron ionized impurities and the strain. (d) s-Ge/Si electronic acoustic phonon scattering rate as a function of strain. (e) s-Ge/Si average mobility changes with strain. (f) s-Ge/Si electron mobility as a function of strain.

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