Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Table 2

Parameter table of scattering mechanism.

Physical quantity	Symbol	Unit
Ionized impurity concentration		cm^−3
Acoustic phonon deformation potential		eV
Nonpolar optical deformation potential		eV·cm^−1
Longitudinal elastic constant	c1	kg/(m·s^2)
Dielectric constant of vacuum		F·m^−1
Dielectric constant		—
Long-wave optical phonon energy		eV
Optical phonon number	nop	—
Material density		g·cm^−3