Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaP)<sub>x</sub><svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-2.9939pt" id="M1" height="15.2545pt" version="1.1" viewBox="-0.0657574 -12.2606 77.6121 15.2545" width="77.6121pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-41" d="M300 -147C201 -63 143 98 143 270S200 602 300 686L282 710C136 610 70 450 70 271V270C70 89 136 -72 282 -170L300 -147Z"/></g><g transform="matrix(.017,0,0,-0.017,5.937,0)"><path id="g113-49" d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z"/></g><g transform="matrix(.017,0,0,-0.017,18.968,0)"><path id="g117-93" d="M531 71V127L115 310L531 494V550L57 335V285L531 71ZM531 -40V10H57V-40H531Z"/></g><g transform="matrix(.017,0,0,-0.017,33.836,0)"><path id="g113-121" d="M536 404C536 423 520 448 491 448C445 448 398 404 308 283L286 338C255 416 242 448 217 448C182 448 138 402 92 341L111 321C149 368 169 378 178 378C188 378 198 363 214 320L254 212C185 117 138 65 107 65C98 65 85 69 82 75C79 82 73 86 65 86C44 86 23 60 23 39C23 7 44 -12 71 -12C119 -12 168 33 265 177L306 61C321 17 347 -12 373 -12C413 -12 465 33 507 96L491 119C459 84 432 60 413 60C395 60 378 92 358 148L321 250C341 279 369 310 389 332C417 363 439 382 456 382C466 382 475 376 481 368C486 361 492 358 496 358C513 358 536 381 536 404Z"/></g><g transform="matrix(.017,0,0,-0.017,48.222,0)"><use xlink:href="#g117-93"/></g><g transform="matrix(.017,0,0,-0.017,63.089,0)"><path id="g113-50" d="M384 0V27C293 34 287 42 287 114V635C232 613 172 594 109 583V559L157 557C201 555 205 550 205 499V114C205 42 199 34 109 27V0H384Z"/></g><g transform="matrix(.017,0,0,-0.017,71.326,0)"><path id="g113-42" d="M275 270C275 450 212 609 64 710L45 686C145 604 203 442 203 270S147 -63 45 -147L64 -170C213 -68 275 89 275 270Z"/></g></svg> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

<div>Distribution of Ga, P, and Si atoms over the thickness of the epitaxial film of the (Si<sub>2</sub>)<sub>1-<i>x</i></sub>(GaP)<sub><i>x</i></sub> solid solution grown on an Si substrate.</div>

Advances in Condensed Matter Physics

fig7

Figure 7

Figure 7: Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaP)<sub>x</sub><svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-2.9939pt" id="M1" height="15.2545pt" version="1.1" viewBox="-0.0657574 -12.2606 77.6121 15.2545" width="77.6121pt"><g transform="matrix(.017,0,0,-0.017,0,0)"><path id="g113-41" d="M300 -147C201 -63 143 98 143 270S200 602 300 686L282 710C136 610 70 450 70 271V270C70 89 136 -72 282 -170L300 -147Z"/></g><g transform="matrix(.017,0,0,-0.017,5.937,0)"><path id="g113-49" d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z"/></g><g transform="matrix(.017,0,0,-0.017,18.968,0)"><path id="g117-93" d="M531 71V127L115 310L531 494V550L57 335V285L531 71ZM531 -40V10H57V-40H531Z"/></g><g transform="matrix(.017,0,0,-0.017,33.836,0)"><path id="g113-121" d="M536 404C536 423 520 448 491 448C445 448 398 404 308 283L286 338C255 416 242 448 217 448C182 448 138 402 92 341L111 321C149 368 169 378 178 378C188 378 198 363 214 320L254 212C185 117 138 65 107 65C98 65 85 69 82 75C79 82 73 86 65 86C44 86 23 60 23 39C23 7 44 -12 71 -12C119 -12 168 33 265 177L306 61C321 17 347 -12 373 -12C413 -12 465 33 507 96L491 119C459 84 432 60 413 60C395 60 378 92 358 148L321 250C341 279 369 310 389 332C417 363 439 382 456 382C466 382 475 376 481 368C486 361 492 358 496 358C513 358 536 381 536 404Z"/></g><g transform="matrix(.017,0,0,-0.017,48.222,0)"><use xlink:href="#g117-93"/></g><g transform="matrix(.017,0,0,-0.017,63.089,0)"><path id="g113-50" d="M384 0V27C293 34 287 42 287 114V635C232 613 172 594 109 583V559L157 557C201 555 205 550 205 499V114C205 42 199 34 109 27V0H384Z"/></g><g transform="matrix(.017,0,0,-0.017,71.326,0)"><path id="g113-42" d="M275 270C275 450 212 609 64 710L45 686C145 604 203 442 203 270S147 -63 45 -147L64 -170C213 -68 275 89 275 270Z"/></g></svg> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

Figure 7 | Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111) 