Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)

Table 1

The growth condition of the micropyramid LED in window areas.

	TMGa (sccm)	TMAl (sccm)	TEGa (sccm)	Pressure (mBar)	Temperature (°C)	Time (min)
n-GaN	40	—	—	300	1095	20
n-AlGaN	40	10	—	100	1100	10
AlGaN barrier	—	10	170	200	880	5
GaN well	—	—	340	200	800	2
p-AlGaN	—	10	210	200	980	8
p-GaN	—	—	210	200	980	4