Research Article
Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition
Figure 2
Surface morphology of epilayers grown on GaAs with a different Alcontent grown at 580°C and 600°C with a V/III ratio of 3.
![923409.fig.002a](https://static.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002a.jpg) |
(a) Samples grown at 580°C |
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![923409.fig.002b](https://static.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002b.jpg) |
(b) Samples grown at 600°C |
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