Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="923409.fig.002a" src="https://static-preview.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Samples grown at 580°C</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="923409.fig.002b" src="https://static-preview.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Samples grown at 600°C</td></tr></table></td></tr></table>

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</svg> epilayers grown on GaAs with a different Alcontent grown at 580°C and 600°C with a V/III ratio of 3.</table>

Advances in Materials Science and Engineering

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Figure 2

Figure 2: Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition 