Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

<table>Variation of <svg height="12.4305pt" id="M38" style="vertical-align:-3.43255pt" version="1.1" viewbox="-0.0498162 -8.99795 16.6812 12.4305" width="16.6812pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z" id="g113-74"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="428" vert-adv-y="428"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,4.918,3.264)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="519" vert-adv-y="519"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,9.726,3.264)"><path d="M100 439H52L25 408L28 396H100V106C100 41 92 35 31 30V0H250V29C188 37 181 41 181 106V396H372V107C372 40 365 37 309 29V0H537V29C461 37 453 40 453 106V396H564C576 403 579 428 574 439H453V469C452 558 462 604 474 623S500 656 527 656C562 656 589 634 608 615C619 604 628 607 639 615C647 622 658 633 661 641C666 653 664 664 656 674C637 696 609 708 572 710C528 703 483 682 439 638C418 661 380 685 320 688C269 683 230 666 190 633C139 593 122 550 113 525S100 476 100 451V439ZM372 439H181V461C181 530 194 571 211 598C226 621 248 643 287 643C343 643 379 607 400 578C391 561 384 546 381 529C376 510 372 486 372 457V439Z" id="g58-26"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="572" vert-adv-y="572"></glyph.data></g></svg> for HEMT at fixed channel length.</table>

Advances in Materials Science and Engineering

fig6

Figure 6

Figure 6: Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices 