Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO<sub><b>2</b></sub> Films

<table><i>I-V</i> characteristics of (a) W/SiO<sub>2</sub>/W, (b) Cu/SiO<sub>2</sub>/W, and (c) Cu/Cu:SiO<sub>2</sub>/W cells.</table>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO<sub><b>2</b></sub> Films 

Advances in Materials Science and Engineering

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

Figure 3

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO₂ Films