Research Article
A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2
Table 1
(a) Experimental conditions and results for SF6 (b) experimental conditions and results for NF3.
| (a) |
| | Number | Power (W) |
Pressure
(mTorr) | Gas (sccm) |
Etch rate
(nm/min) | 13.56 (MHz) | 2 (MHz) | | 13.56 (MHz) | 2 (MHz) |
SF6 | O2 | Vpp (V) | Vpp (V) |
| | 1 | 25 | 75 | 200 | 30 | 30 | 704 | 71.68 | 490.13 | | 2 | 50 | 50 | 200 | 30 | 30 | 872 | 147.19 | 318.04 | | 3 | 75 | 25 | 200 | 30 | 30 | 720 | 189.06 | 227.10 | | 4 | 25 | 75 | 150 | 30 | 30 | 540 | 74.76 | 476.85 | | 5 | 25 | 75 | 100 | 30 | 30 | 380 | 84.71 | 589.88 | | 6 | 25 | 75 | 200 | 30 | 15 | 612 | 71.60 | 490.78 | | 7 | 25 | 75 | 200 | 30 | 45 | 624 | 73.42 | 483.61 |
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|
| (b) |
| | Number | Power (W) |
Pressure
(mTorr) | Gas (sccm) |
Etch rate
(nm/min) | 13.56 (MHz) | 2 (MHz) | |
13.56 (MHz) |
2 (MHz) | NF3 | O2 | Vpp (V) | Vpp (V) |
| | 1 | 25 | 75 | 200 | 30 | 30 | 1,188 | 74.85 | 105.86 | | 2 | 50 | 50 | 200 | 30 | 30 | 1,280 | 149.65 | 211.64 | | 3 | 75 | 25 | 200 | 30 | 30 | 1,160 | 159.00 | 224.86 | | 4 | 25 | 75 | 150 | 30 | 30 | 1,040 | 77.96 | 110.26 | | 5 | 25 | 75 | 100 | 30 | 30 | 768 | 77.24 | 109.24 | | 6 | 25 | 75 | 200 | 30 | 15 | 870 | 75.63 | 106.96 | | 7 | 25 | 75 | 200 | 30 | 45 | 912 | 75.99 | 107.48 |
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