A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

<div>(a) The ESD/HBM failure threshold versus pickup length comparison among the normal GGNMOS and various butting pickup conditions. (b) The ESD/HBM failure threshold versus pickup length comparison among the normal GGNMOS and various inserted pickup conditions.</div>

Advances in Materials Science and Engineering

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Figure 6

Figure 6: A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability 