A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

Figure 7

(a) The simulated 2D current distribution of the normal GGNMOS structure. Its substrate current is 4.22 mA with peak lattice temperature 880°K. (b) The simulated 2D current distribution of the butting structure. The substrate current of the butting structure is 325.9 mA with peak lattice temperature 1167°K. Similar simulated inserted structure has substrate current 298.1 mA with peak lattice temperature 1104°K.

(a)

(b)