Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

<div>Plots of experimental data and model. (a) shows the InAs composition versus stripe fraction for different stripe length when the initial material is In<sub>0.27</sub>Ga<sub>0.2</sub>As<sub>0.53</sub>. (b) shows the InAs composition versus stripe fraction for different cooling rate when the initial material is In<sub>0.27</sub>Ga<sub>0.2</sub>As<sub>0.53</sub>.</div>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: Rapid Melt Growth of Single Crystal InGaAs on Si Substrates 