Computer Simulation of Metal Ions Transport to Uneven Substrates during Ionized Plasma Vapour Deposition

<div>Scheme of the computational domain. A: source of particles, Dirichlet boundary condition <svg height="8.8423pt" id="M29" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 30.7728 8.8423" width="30.7728pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M715 650H476L470 622C550 619 562 610 562 570C562 536 553 481 535 384L523 321C485 121 408 37 283 37C178 37 99 109 134 297L178 532C193 612 199 616 278 622L284 650H29L23 622C105 616 109 609 94 532L48 291C23 160 51 83 98 40C143 -1 202 -16 260 -16C321 -16 387 3 439 49C509 111 542 204 563 312L577 384C595 479 608 533 619 569C629 603 637 620 709 622L715 650Z" id="g113-86"></path></g><g transform="matrix(.013,0,0,-0.013,13.086,0)"><path d="M535 323V373H52V323H535ZM535 138V188H52V138H535Z" id="g117-34"></path></g><g transform="matrix(.013,0,0,-0.013,24.349,0)"><path d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z" id="g113-49"></path></g></svg> V was applied on this side. B: trenched substrate, Dirichlet boundary condition <span class="nowrap"><svg height="11.927pt" id="M30" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 38.0119 11.927" width="38.0119pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M715 650H476L470 622C550 619 562 610 562 570C562 536 553 481 535 384L523 321C485 121 408 37 283 37C178 37 99 109 134 297L178 532C193 612 199 616 278 622L284 650H29L23 622C105 616 109 609 94 532L48 291C23 160 51 83 98 40C143 -1 202 -16 260 -16C321 -16 387 3 439 49C509 111 542 204 563 312L577 384C595 479 608 533 619 569C629 603 637 620 709 622L715 650Z" id="g113-86"></path></g><g transform="matrix(.013,0,0,-0.013,13.086,0)"><path d="M535 323V373H52V323H535ZM535 138V188H52V138H535Z" id="g117-34"></path></g><g transform="matrix(.013,0,0,-0.013,24.349,0)"><path d="M715 650H476L470 622C550 619 562 610 562 570C562 536 553 481 535 384L523 321C485 121 408 37 283 37C178 37 99 109 134 297L178 532C193 612 199 616 278 622L284 650H29L23 622C105 616 109 609 94 532L48 291C23 160 51 83 98 40C143 -1 202 -16 260 -16C321 -16 387 3 439 49C509 111 542 204 563 312L577 384C595 479 608 533 619 569C629 603 637 620 709 622L715 650Z" id="g113-86"></path></g><g transform="matrix(.0091,0,0,-0.0091,32.955,3.132)"><path d="M460 334C460 396 434 451 378 451C330 451 241 408 148 300H146L237 679C241 697 241 710 232 710C213 710 153 684 67 675L66 646H95C141 646 145 642 134 595L39 170C23 97 31 54 46 33C64 8 100 -12 137 -12C178 -12 234 3 298 43C391 101 460 222 460 334ZM371 320C371 204 316 89 248 51C230 41 208 37 192 37C143 37 102 72 119 166C124 194 129 215 135 235C202 323 298 392 335 392C353 392 371 372 371 320Z" id="g50-99"></path></g></svg>.</span> C: computational domain, period boundary condition was applied on remaining sides of the domain.</div>

Advances in Materials Science and Engineering

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Figure 1

Figure 1: Computer Simulation of Metal Ions Transport to Uneven Substrates during Ionized Plasma Vapour Deposition 