Computer Simulation of Metal Ions Transport to Uneven Substrates during Ionized Plasma Vapour Deposition

Table 1

A list of processes included in global model and their parameters.

Process	Parameter	Ref.	Value
Electron impact ionization of Cu	Cross section	[9]
Penning ionization of Cu	Cross section	[10]
Ambipolar diffusion loss of Cu^+	Thermal mobility of Cu^+ in Ar	[11]
Ambipolar diffusion loss of Ar^+	Thermal mobility of Ar^+ in Ar	[11]
Electron impact Ar excitation	Cross section	[12]
Diffusion loss of	Diffusion coefficient	[13]
Collision of and electron	Collision frequency	[14]
Decay of trapped resonant radiation of	Radiative lifetime of the resonance transition	[15]
Electron impact ionization of	Cross section	[16]
Electron impact ionization of Ar	Cross section	[12]

denotes the lowest metastable argon state and a nearby radiative level; is function of electron energy. value is valid for neutral gas temperature 300 K and number density . is in s⁻¹, electron temperature in eV, and electron number density in cm⁻³.