Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

<div>Arrhenius plot for log <svg height="11.927pt" id="M77" style="vertical-align:-3.291101pt" version="1.1" viewbox="-0.0498162 -8.6359 10.0959 11.927" width="10.0959pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M429 650H175L169 622C251 614 259 612 244 532L174 152C163 91 152 37 135 -6C109 -72 67 -101 23 -113L33 -144C45 -143 73 -134 102 -119C186 -76 229 -1 254 133L327 532C341 609 347 613 423 622L429 650Z" id="g113-75"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="452" vert-adv-y="452"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,5.031,3.132)"><path d="M245 635C92 635 37 457 37 312C37 149 91 -12 244 -12C395 -12 449 166 449 312C449 469 395 635 245 635ZM243 598C332 598 358 454 358 312C358 173 334 26 245 26C158 26 128 174 128 313S152 598 243 598Z" id="g50-49"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="487" vert-adv-y="487"></glyph.data></g></svg> versus 1000/<i>T</i>. The inset is a plot of the <svg height="12.3916pt" id="M78" style="vertical-align:-3.42948pt" version="1.1" viewbox="-0.0498162 -8.96212 12.0102 12.3916" width="12.0102pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M542 242C542 369 469 429 379 468C370 472 372 496 376 513L416 681L400 691L344 648L219 51C167 69 113 128 113 217C113 324 166 387 266 428L252 459C124 418 23 336 23 202C23 95 90 13 205 -8L182 -132C165 -222 191 -254 209 -261L215 -258L270 -7C415 -4 542 98 542 242ZM469 232C469 126 403 33 279 39L355 409C399 394 469 331 469 232Z" id="g113-243"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="565" vert-adv-y="565"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.02,3.132)"><path d="M460 334C460 396 434 451 378 451C330 451 241 408 148 300H146L237 679C241 697 241 710 232 710C213 710 153 684 67 675L66 646H95C141 646 145 642 134 595L39 170C23 97 31 54 46 33C64 8 100 -12 137 -12C178 -12 234 3 298 43C391 101 460 222 460 334ZM371 320C371 204 316 89 248 51C230 41 208 37 192 37C143 37 102 72 119 166C124 194 129 215 135 235C202 323 298 392 335 392C353 392 371 372 371 320Z" id="g50-99"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="478" vert-adv-y="478"></glyph.data></g></svg> value versus temperature.</div>

Advances in Materials Science and Engineering

fig5

Figure 5

Figure 5: Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type <i>β</i>-FeSi<sub>2</sub> Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 

Figure 5 | Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering 