Review of Development Status of Bi₂Te₃-Based Semiconductor Thermoelectric Power Generation

Table 1

The value of ZT of the Bi-Te-based material (reproduced from [13] with permission).

Authors	Published year	Material	ZT	Temperature (K)
Tan et al. [15]	2014	Bi2Se0.5Te2.5	1.28	Room temperature
Yeo and Oh [16]	2014	(Bi,Sb)2Te3	1.41	Room temperature
Tan et al. [17]	2014	Bi2Te2.7Se0.3	1.27	Room temperature
Chen et al. [18]	2014	Bi0.4Sb1.6Te3	1.26	Room temperature
Fan et al. [19]	2014	p type (Bi,Sb)2Te3	1.17	323
Tan et al. [20]	2014	Bi2(Te,Se)3	1.01	Room temperature
Xu et al. [21]	2012	p type(Bi0.26Sb0.74)2Te3 + 3%Te ingots	1.12	Room temperature
Jiang et al. [22]	2005	Bi-Sb-Te materials	1.15	350
Hong et al. [23]	2003	(Bi2Te3)0.25(Sb2Te3)0.75	1.80	723
Kim et al. [24]	2002	Bi2Te2.85Se0.15	2.38	773
Park et al. [25]	2002	Bi0.5Sb1.5Te3	1.93	693
Yang et al. [26]	2001	Bi2Te3-Sb2Te3	1.26	420
Venkatasubramanian et al. [27]	2001	p type Bi2Te3/Sb2Te3	1.67	723
Yang et al. [28]	2000	95%Bi2Te3-5%Bi2Se3	1.77	693
Miura et al. [29]	2000	90%Bi2Te3-5% Sb2Te3-5% Sb2Se3	1.87	713
Seo et al. [30]	1997	(Bi2Se3)x(Bi2Te3)1−x	1.62	693
Seo et al. [30]	1997	Bi2Te3	1.86	693
Seo et al. [31]	1996	Bi2Te2.85Se0.15	2.4	300