Review Article
Review of Development Status of Bi2Te3-Based Semiconductor Thermoelectric Power Generation
Table 3
The effect of doping contents on the thermoelectric properties of Bi2Te3.
| Materials | Doping type | Carrier type | Z/10−3 (K) |
| Bi2Te3 | — | n | 2.0 | Bi2Te3 | AgI | n | 2.2 | Bi2Te3 | CuI | n | 2.6 | Bi2Te2.7Se0.3 | AgI | n | 2.3 | Bi2Te2.7Se0.3 | — | n | 2.4 | Bi2Te2.25Se0.75 | CuBr2 | n | 2.7 | Bi2Te2.88Se0.12 | SbI3 | n | 3.1 | Bi1.8Sb0.2Te2.7Se0.3 | SbI3 | n | 3.2 | Bi2Te3 | Excessive Bi | p | 1.6 | Bi2Te3 | Excessive Bi | p | 1.5 | Bi2Te3 | — | p | 1.8 | Bi1.5Sb0.5Te3 | Excessive Bi | p | 2.2 | Bi0.5Sb1.5Te3 | Excessive Bi | p | 3.1 | Bi1.52Sb0.5Te2.85Se0.15 | Excessive Bi | p | 2.4 | Bi1.5Sb0.5Te2.90Se0.1 | Excessive Bi | p | 3.4 |
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