Review of Development Status of Bi₂Te₃-Based Semiconductor Thermoelectric Power Generation

Table 4

Comparison of different preparation methods of Bi-Te-based material.

Preparation method	T (°C)	S ( V·K^−1)	()
ECD	400–492	−213 to −129	—
PLD	—	—	—
MBE	250–310	−180	—
MOCVD	400–492	−218	6.92
Coevaporation	300	−228 (n type)	12.99 (n type)
		81 (p type)	3.23 (p type)
Flash evaporation	473	−180	27
IBS	Room temperature	−168 to −32	3.18
MS	Room temperature	59.89	1.47