Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis

Figure 2

(a) Raman spectra of different layer numbers of MoSe₂ supported by SiO₂ (285 nm)/Si substrate by 633 nm laser. (b) Raman peak position of MoSe₂’s A_1g peak and Si peak for different layer numbers (left vertical axis) and their difference (right vertical axis). (c) Raman peak intensity of MoSe₂’s A_1g peak and Si peak for different layer numbers (left vertical axis) and their ratio (right vertical axis). (d) Raman peak line width of MoSe₂’s A_1g peak and Si peak.

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