Modulation Electronic Properties of Silicane/SnSe₂ Van der Waals Heterostructures Using External Force and Electric Field

Table 1

The formation energy (E_f) of the heterostructure and the interface distance between the two layers (Δ) of the six stacking conformations.

Model	I	II	III	IV	V	VI
Ef (eV)	−0.720	−0.692	−0.688	−0.692	−0.679	−0.690
(Å)	2.938	3.185	2.969	3.245	3.242	3.235