Research Article

The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure

Figure 1

(a) Calculated conduction band edge profiles and wave functions for the first four subbands of Mg0.3Zn0.7O/ZnO HEMT structures; (b) the electron confinement and the Mg0.3Zn0.7O (30 nm)/ZnO (400 nm) heterostructure (inset, not to scale).
(a)
(b)