The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure

<div>Carrier sheet densities as a function of MgZnO layer thickness. Mg composition <i>x</i> = 0.3, 0.35 for solid and dashed lines, respectively. ZnO layer thickness <svg height="9.25202pt" id="M63" style="vertical-align:-3.29111pt" version="1.1" viewbox="-0.0498162 -5.96091 27.4103 9.25202" width="27.4103pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M689 332C689 394 670 448 646 448C620 448 597 421 597 396C597 386 600 381 608 372C619 359 620 334 620 315C620 150 538 45 454 45C414 45 386 67 386 122C386 138 388 158 394 180L457 426L452 432L377 416L315 156C302 100 259 45 216 45C176 45 148 67 148 122C148 133 152 158 156 180C162 212 173 259 194 332C201 357 206 384 206 405C206 430 198 448 174 448C125 448 66 406 23 342L43 319C84 368 110 383 121 383C126 383 128 382 128 377C128 370 127 359 122 343C99 268 84 204 77 156C74 137 70 111 70 104C70 25 125 -12 180 -12C228 -12 276 12 319 50C338 8 378 -12 418 -12C549 -12 689 166 689 332Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,8.931,3.132)"><path d="M701 633L695 650H264C230 650 223 653 209 675H184C176 622 160 547 140 473L173 471C198 528 219 557 232 573C254 600 272 612 384 612H566L24 18L33 0H597C617 34 651 142 661 179L629 194C598 133 574 92 545 69C510 41 440 40 342 40C274 40 209 42 163 46L701 633Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,15.265,3.132)"><path d="M504 89L488 119C453 85 428 69 416 69C408 69 405 75 412 102L462 304C492 438 460 451 436 451S388 441 356 423C311 397 229 336 170 256H168L189 340C208 418 200 451 177 451C144 451 82 413 24 352L40 322C65 345 98 369 108 369C114 369 119 363 112 335L28 -3L36 -12C54 -3 83 4 112 10C125 73 138 122 153 174C205 258 328 382 376 382C395 382 399 369 384 305L330 93C312 25 323 -12 351 -12C378 -12 439 21 504 89Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,20.088,3.132)"><path d="M750 359C750 550 603 667 427 667C199 667 24 499 24 287C24 100 166 -17 344 -17C573 -17 750 136 750 359ZM645 356C645 196 538 24 350 24C205 24 127 136 127 285C127 471 247 626 422 626C571 626 645 521 645 356Z"></path></g></svg>= 60 nm.</div>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure 