The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure

Figure 5

Electron mobility limited by (a) IFR and DIS scatterings; (b) by IFR, DIS, and POP scatterings; (c) by IFR scattering with various correlation lengths; (d) by IFR scattering with various averaged heights. Inset is electron mobility of DIS scattering. MgZnO and ZnO layer thicknesses are fixed as 40 nm and 60 nm, respectively.

(a)

(b)

(c)

(d)