Research Article
Microstructure, Mechanical, and Nanotribological Properties of Ni, Ni-TiN, and Ni90Cu10-TiN Films Processed by Reactive Magnetron Cosputtering
Table 1
The deposition parameters for the investigated thin films.
| Processing parameters | Values |
| Base pressure | 2.0 × 10−6 Torr | Working pressure | 30 m Torr | Gas ratio (Ar : N2) | 1 : 2 | RF power for Ti target | 300 W | DC power for Ni target | 50 W | DC power for Cu target | 9 W | Substrate temperature | 100°C | Substrate bias | −60 V | Speed for substrate rotation | 25 rpm | Substrate to target distance | 150 mm |
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