Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

<div>For four samples scanning electron microscope (SEM) images: (a) and related genuine RAS signal spectra. (b) The top two experimental results correspond to etching of plain GaSb wafers, the bottom ones to plain GaAs wafers.</div>

Advances in Materials Science and Engineering

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Figure 1

Figure 1: Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 

Figure 1 | Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 