Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

<div>Scanning electron microscope (SEM) image of a “Brush Cut” morphology introduced during nonreactive ion etching (IE) of a GaSb wafer. Depending on etch time, the pillar (brush hair) height/width is quite different.</div>

Advances in Materials Science and Engineering

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Figure 2: Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 

Figure 2 | Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 