Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

<div>PC1<sub>RAS</sub> and PC1<sub>average reflectivity</sub> evolutions and scanning electron microscope (SEM) images of “Brush Cut” morphologies introduced during reactive ion etching (RIE) of GaSb substrates. Insets in the SEM micrographs correspond to their two-dimensional spatial autocorrelations.</div>

Advances in Materials Science and Engineering

fig4

Figure 4

Figure 4: Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 

Figure 4 | Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) 