In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>RAS signal difference between the n-doped and undoped cases as a function of effusion cell temperature for GaAs at 2.4 eV (a “correlation”) (<i>a</i><sub>3</sub> = −0.552 ± 0.090, <i>b</i><sub>3</sub> = 0.00366 ± 0.00049 from equation RAS<sub>diff</sub> = <i>a</i><sub>3</sub> + <i>b</i><sub>3</sub>T).</div>

Advances in Materials Science and Engineering

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Figure 10

Figure 10: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 10 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 