In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship between the charge carrier concentration and the RAS signal difference for n-GaAs at 2.4 eV. The ordinate is logarithmic (<i>a</i><sub>2</sub> = 17.5 ± 0.1, <i>b</i><sub>2</sub> = 6.93 ± 1.17).</div>

Advances in Materials Science and Engineering

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Figure 11

Figure 11: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 11 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 