In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>RAS transient during preparation of p-doping sample P1142 with Al<sub>0.5</sub>Ga<sub>0.5</sub>As for RAS photon energy 2.7 eV. The connecting lines are only visual aids.</div>

Advances in Materials Science and Engineering

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Figure 12

Figure 12: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 12 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 