In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Averaged RAS spectrum of an Al<sub>0.5</sub>Ga<sub>0.5</sub>As sample (P1184, 800°C Be effusion cell temperature) with p-doping, shown in red. The spectrum for the undoped layer is shown in black. The connecting lines are only visual aids.</div>

Advances in Materials Science and Engineering

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Figure 13

Figure 13: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 13 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 