In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship between the set Be effusion cell temperature and the charge carrier concentration for p-doped Al<sub>0.5</sub>Ga<sub>0.5</sub>As samples. The ordinate is logarithmic (<i>a</i><sub>1</sub> = 3.82 ± 0.06, <i>b</i><sub>1</sub> = 0.0188 ± 0.0001).</div>

Advances in Materials Science and Engineering

fig14

Figure 14

Figure 14: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 14 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 