In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Figure 15

RAS signal difference between the p-doped and undoped layers as a function of Be effusion cell temperature for Al_0.5Ga_0.5As at 2.7 eV (a “correlation”) (a₃ = −0.414 ± 0.055, b₃ = 0.000614 ± 0.000072 from equation RAS_diff = a₃ + b₃T).