In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship between the set Te effusion cell temperature and the charge carrier concentration for n-doped Al<sub>0.5</sub>Ga<sub>0.5</sub>As samples. The ordinate is logarithmic (<i>a</i><sub>1</sub> = 13.4 ± 0.3, <i>b</i><sub>1</sub> = 0.0243 ± 0.0016).</div>

Advances in Materials Science and Engineering

fig17

Figure 17

Figure 17: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 17 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 