In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Figure 19

RAS signal difference between the n-doped and undoped cases as a function of Te effusion cell temperature for Al_0.5Ga_0.5As at 2.7 eV (a “correlation”) (a₃ = −0.661 ± 0.090, b₃ = 0.00414 ± 0.00048 from equation RAS_diff = a₃ + b₃T).