In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship between carrier concentration and RAS signal difference for n-Al<sub>0.5</sub>Ga<sub>0.5</sub>As at 2.7 eV. The ordinate is logarithmic (<i>a</i><sub>2</sub> = 17.3 ± 0.1, <i>b</i><sub>2</sub> = 5.83 ± 0.07).</div>

Advances in Materials Science and Engineering

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Figure 20

Figure 20: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 20 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 