In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Averaged RAS spectra for undoped (black) and doped (red) Al<sub>0.9</sub>Ga<sub>0.1</sub>As (sample P1136) with a p-doping of about 1⋅10<sup>18</sup> cm<sup>−3</sup>. The connecting lines are only guides to the eye.</div>

Advances in Materials Science and Engineering

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Figure 21

Figure 21: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 21 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 