In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship (obtained by van der Pauw measurements) between the carrier concentration for p-doped GaAs samples and the Be effusion cell temperature. The ordinate is logarithmic (<i>a</i><sub>1</sub> = 4.85 ± 0.65, <i>b</i><sub>1</sub> = 0.0174 ± 0.0008).</div>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 3 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 