In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Averaged RAS spectrum of a GaAs sample (P1140, 840°C Be effusion cell temperature) with p-doping, shown in red. The RAS spectrum for the undoped sample/buffer is shown in black. The connecting lines are merely guides to the eye.</div>

Advances in Materials Science and Engineering

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Figure 4

Figure 4: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 4 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 