In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>RAS signal difference between the p-doped and undoped cases as a function of Be effusion cell temperature for GaAs at 2.4 eV (a “correlation”). For the fit, the lowest doping has not been considered because the RAS signal difference appears to behave differently for low doping levels (<i>a</i><sub>3</sub> = −0.349 ± 0.021, <i>b</i><sub>3</sub> = 0.000514 ± 0.000027 from equation RAS<sub>diff</sub> = <i>a</i><sub>3</sub> + <i>b</i><sub>3</sub>T, leaving the data point for sample P1129 out for fit calculation).</div>

Advances in Materials Science and Engineering

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Figure 6

Figure 6: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 6 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 