In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Relationship between carrier concentration and RAS signal difference for p-GaAs at 2.4 eV. The smallest doping has not been considered in the fit. The ordinate is logarithmic (<i>a</i><sub>2</sub> = 16.8 ± 0.04, <i>b</i><sub>2</sub> = 34.1 ± 0.6, leaving the data point for sample P1129 out for fit calculation).</div>

Advances in Materials Science and Engineering

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Figure 7

Figure 7: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 7 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 