In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Interdependence of the set Te effusion cell temperature and the carrier concentration for n-doped GaAs samples. The ordinate is logarithmic (<i>a</i><sub>1</sub> = 14.2 ± 0.1, <i>b</i><sub>1</sub> = 0.0225 ± 0.0006).</div>

Advances in Materials Science and Engineering

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Figure 8

Figure 8: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 8 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 