In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

<div>Averaged RAS spectrum of a GaAs sample (P1126, 205°C Te effusion cell temperature) with n-doping, shown in red. The spectrum of the undoped buffer is shown in black. The connecting lines are guides to the eye.</div>

Advances in Materials Science and Engineering

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Figure 9

Figure 9: In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 

Figure 9 | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors 